| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Effect of a NiCo interlayer on the electrical and structural properties of nickel silicides |
| 초록 |
The effects of a nickel-cobalt interlayer on the electrical and structural properties of nickel silicide (NiSi) have been investigated as a function of rapid thermal annealing (RTA) temperature. The insertion of a NiCo interlayer improves the morphological stability of NiSi films which results in better electrical properties at high temperatures. This could be attributed to the segregation of Co atoms at grain boundaries of NiSi film, which reduces grain boundary energy leading to suppression of grain growth and grooving. The increase of thermal stability has been explained in terms of concepts of the thermodynamics and kinetics. The low angle incident x-ray diffraction scans, field emission scanning electron microscopy and field emission transmission electron microscopy were performed to investigate the electrical and structural properties of silicide. |
| 저자 |
Jin-Bok Lee1, Bong-Jun Park2, Chel-Jong Choi3, Tae-Yeon Seong2
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| 소속 |
1Department of Materials Science and Engineering, 2Korea Univ., 3Department of Nano-Semiconductor Engineering |
| 키워드 |
nickel silicide; NiCo interlayer; thermal stability; segregation; miscibility
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| E-Mail |
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