초록 |
Semiconductor nanowires are promising building blocks for future mesoscopic electronic and optical devices since these materials can exhibit diverse device behavior and simultaneously function as the wires that access and interconnect devices. In particular, silicon nanowires (SiNWs) offer an ideal basis to study the effects of quantum confinement and its possible applications, due to the its predominant role in semiconductor technology. To explore these opportunities, large-scale synthesis of nanometer-scale size-monodisperse SiNW and controlled assembly of these building blocks in a parallel, scalable, and high reproducible manner are both challenging and necessary. Herein we report large-scale CVD growth of monodisperse silicon nanowires using 2D hexagonal mesoporous solid as a template and a solution-based approach for hierarchically organizing nanowire building blocks en masse into integrated arrays tiled over large areas and a parallel and scalable general strategy for the fabrication of large-scale arrays of interconnected nanowire devices. |