| 초록 |
The substrate-type thin film solar cell (TFSC) consists of various layers, such as back contact, absorber layer, buffer layer, window layer, and top contact. Therefore, optimization of the process conditions for each layer is essential to produce a TFSC with a high and consistent power conversion efficiency. Especially, the n-type buffer layer forms a direct junction with the p-type absorber layer. The quality of this junction directly affects the characteristics of VOC and short-circuit current (JSC) of TFSCs; thus, it is necessary to establish the process conditions for the buffer layer. In this work, we investigated the effect of thickness of the CdS buffer layer on the performance of SnS/CdS TFSCs. SnS films were deposited by vapor transport deposition using SnS powder in a horizontal furnace and CdS buffer layer was deposited by chemical bath deposition method. The thickness of the CBD-CdS buffer layer was varied by changing the deposition time from 15 to 25 min, which resulted in a thickness variation within the range of 30–80 nm. Finally, we fabricated the complete devices and compared the performances of the SnS/CdS TFSCs. The maximum PCE of 3.05% with VOC = 0.297 V, JSC = 19.4 mA cm-2, and fill factor (FF) = 52.8% was achieved for ~42 nm thick CdS buffer layer (18 min of CdS deposition time). More details on device properties will be discussed in this presentation. |
