| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Tin monosulfide thin films grown by metal organic chemical vapor deposition using a novel tin precursor |
| 초록 |
Tin (II) monosulfide (SnS) is a promising candidate to replace current thin film light absorbing materials in photovoltaics. SnS has a moderate band-gap (1.1-1.3 eV) with a high optical absorption coefficient. SnS thin films have been prepared by metal organic chemical vapor deposition (MOCVD) from the reaction of Sn(dmamp)2 and H2S gas as the source materials. SnS films were deposited on Si, SiO2 and glass substrates at the deposition temperature of 200-400 oC. Post annealing of SnS thin films was carried out at 400 ℃ for 1 h under the H2S ambient. Raman spectroscopy and x-ray photoelectron spectroscopy results show that SnS thin film has no impurities or other binary phase detected inside the films. Hall measurement using van der Pauw method indicate that the film has a p-type conductivity with a hole mobility of 30 cm2/V·s. SnS thin film growth as well as structural and physical characterization will be also provided in this study. |
| 저자 |
최지운1, 한성호2, 정택모2, 이영국2, 신병하1
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| 소속 |
1한국과학기술원, 2한국화학(연) |
| 키워드 |
Thin film solar cell; MOCVD; chalcogenide
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| E-Mail |
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