| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Formation Mechanism of Thermally Optimized Ga-Doped MgZnO Transparent Conducting Electrodes for GaN-Based Light-Emitting Diodes |
| 초록 |
We report a highly transparent conducting electrode (TCE) scheme of MgxZn1-xO:Ga/Au/NiOx which was deposited on p-GaN by e-beam for GaN-based light emitting diodes (LEDs). The optical and electrical properties of the electrode were optimized by thermal annealing at 500°C for 1 minute in N2 + O2 (5:3) ambient. The light transmittance at the optimal condition increased up to 84 - 97% from the UV-A to yellow region. The specific contact resistance decreased to 4.3(±0.3) × 10−5 Ωcm2. The improved properties of the electrode were attributed to the directionally elongated crystalline nanostructures formed in the MgxZn1-xO:Ga layer which is compositionally uniform. Interestingly, the Au alloy nano-clusters created in the MgxZn1-xO:Ga layer during annealing at 500°C may also enhance the properties of the electrode by acting as a conducting bridge and a nano-sized mirror. Based on studies of the external quantum efficiency of blue LED devices, the proposed electrode scheme combined with an optimized annealing treatment suggests a potential alternative to ITO. |
| 저자 |
조용륜, 명소현, 김봉중
|
| 소속 |
광주과학기술원 신소재공학부 |
| 키워드 |
transparent conducting electrode (TCE); Mg<SUB>x</SUB>Zn<SUB>1-x</SUB>O; LED; external quantum efficiency (EQE); ohmic contact
|
| E-Mail |
|
