| 학회 |
한국재료학회 |
| 학술대회 |
2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 |
11권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
열처리시 Si 기판과 zirconate 박막 사이에 형성되는 다층 구조 분석 |
| 초록 |
The ultrathin zirconium oxide films were grown with various gas flow ratios (O2:Ar) by r.f.- magnetron sputtering to investigate the interfacial properties between ZrO2 thin films and Si substrate by heat treatment. The stoichiometric ZrO2 films with the smooth surface could be obtained by controlling oxygen ratio to argon. The Zr-free SiO2 interfacial layer thickness abruptly increased at the annealing temperature of 750oC, due to rapid oxygen diffusion through the ZrO2. Also, the Zr silicide layer was observed between ZrO2 and Zr silicate by X-ray photoelectron spectroscopy (XPS). This is explained by excess Si due to rapid diffusivity of Si into the structure resulting in forming the silicide layer on Zr silicate. |
| 저자 |
허재성1, 최훈상2, 백상열1, 손창식3, 최인훈1
|
| 소속 |
1고려대, 2RIKEN, 3신라대 |
| 키워드 |
Zirconium oxide; Zr silicide; Zr silicate
|
| E-Mail |
|
