| 학회 | 한국화학공학회 |
| 학술대회 | 2007년 봄 (04/19 ~ 04/20, 울산 롯데호텔) |
| 권호 | 13권 1호, p.883 |
| 발표분야 | 이동현상 |
| 제목 | CFD Modeling of Reaction on Titanium Nitride Byproducts in CVD Trap System |
| 초록 | Currently, as CVD surface reaction applied in semiconductor industry requires complicated chemistry, it is concerned on critical issue that the byproducts resulted from the residue gases in the low temperature damages the exhaust line and pumping system of CVD equipment. The research on the surface reaction of high temperature has already many outcomes in terms of material science of product, but that of low temperature has rare interest and results. The research on the surface reaction of low temperature is critical and meaningful works. In current steam line, TiN is essential process to make a diffusion barrier of semiconductor. Trap system located behind TiN CVD chamber has a significant rule to reduce damaging the exhaust line and pumping system because TiN byproducts formed below 200℃ in Trap system. A three-dimensional model is developed and described for a Trap system is used. Our model simulation has a satisfactory agreement with experimental data of Trap system. The deposition rate of TiCl4.4NH3(s) is found to increase dominantly along with increasing temperature of trap body as suggesting that chemical vapor deposition of TiCl4.4NH3(s) is surface-reaction-controlled. |
| 저자 | 방창현1, 정동훈1, 채희엽1, 이승일2, 조재효2 |
| 소속 | 1성균관대, 2(주) 미래보 |
| 키워드 | Titanium Nitride; TiCl4.4NH3 (s); Chemical Vapor Deposition; Trap system |
| 원문파일 | 초록 보기 |
