| 학회 |
한국재료학회 |
| 학술대회 |
2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 |
18권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Growth and photocurrent-response study for valence-band splitting of the photoconductive AgGaSe2 layers |
| 초록 |
The photoconductive AgGaSe2 (AGS) layers were epitaxially grown along the ＜112＞ direction onto GaAs (100) substrates using the hot wall epitaxy method. By measuring the photocurrent (PC) spectra, three peaks were observed at the temperature range 10-100 K. These peaks are caused by the band-to-band transition from the valence-band state of Γ7(A), Γ6(B), and Γ7(C) to the conduction-band state of Γ6, respectively. Thus, the crystal-field splitting and the spin-orbit splitting were estimated to be 0.251 and 0.310 eV, respectively. However, a good agreement between optical absorption and PC-peak energy was acquired. The band-gap variation as a function of temperature on AGS was well fitted by Eg(T) ＝ 1.950 － 8.37x 10-4 T 2/(T ＋ 224). The band-gap energy of AGS obtained at 293 K was extracted out to be 1.811 eV by means of the PC experiment and optical absorption. |
| 저자 |
You Sangha, Hong Kwangjoon
|
| 소속 |
Department of physics Chosun Univ. |
| 키워드 |
AGS layers; PC spectra; band-to-band transition; splitting energy
|
| E-Mail |
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