| 초록 |
In this study, organic field effect transistors with top gate structures were fabricated on paper substrate and their characteristics were studied. In the FET device, metals (Au, Ni, Ag, Al) were used to make source-drain electrodes and aluminum was used as gate electrode. Regio-regular poly(3-hexylthiophene) and polyvinylalcohol were used as semiconducting and insulating materials, respectively. In the device fabrication, various methods for thin film making were used to fabricate the FET devices - electroless deposition, thermal evaporation, spin coating and ink jet printing were used to prepare the electrodes. The variation of device performance on the work functions of metals will be discussed. |
