| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 |
Binding energy study from photocurrent siginal in CdIn2S4 epilayers grown on GaAs by hot wall epitaxy |
| 초록 |
The high-quality CdIn2S4 films were grown on semi-insulating GaAs (100) by a hot-wall epitaxy method. From photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared to the three peaks at the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of Γ4(z), Γ5(x), and Γ5(y) to the exciton below conduction band state of Γ1(s), respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the optical band gap obtained from the PC measurement was well described by Eg(T) = 2.7116 eV － (7.65 × 10-4 eV/K)T2/(425 ＋ T). Consequently, the band-gap energy was easily extracted through the PC spectroscopy. |
| 저자 |
Sangha You, Kwangjoon Hong
|
| 소속 |
Department of physics Chosun Univ. |
| 키워드 |
Hot wall epitaxy; Photocurrent; splitting energy
|
| E-Mail |
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