| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Low-voltage complementary electronics from ion gel-gated vertical van der Waals heterostructures |
| 초록 |
Isolation of ultrathin layered materials with disparate electronic properties has prompted their integration into van der Waals heterostructures with unique properties for electronics. By employing ion gel dielectrics, we demonstrate low-voltage complementary circuits comprised of n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs). The n-type and p-type VFETs were fabricated from MoS2 and WSe2 layers on graphene, respectively, with gating achieved by a top ion gel dielectric. The work function of the underlying graphene and the injection barrier for the MoS2 and WSe2 layers are widely tuned at low operating voltages. The resulting VFETs possess high on-state current densities and on/off current ratios in a narrow voltage window. Overall, these results demonstrate the feasibility of vertical van der Waals heterostructures for high-performance, low-voltage electronics. |
| 저자 |
최용석1, 강준모2, Deep Jariwala2, 강문성3, Tobin J. Marks2, Mark C. Hersam2, 조정호1
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| 소속 |
1성균관대, 2Northwestern Univ., 3숭실대 |
| 키워드 |
graphene; transition metal dichalcogenide; vertical transistor; ion gel; low power; Schottky barrier
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| E-Mail |
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