| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | Electrical properties of lanthanum hafnium oxide thin films deposited by electron cyclotron resonance atomic layer deposition |
| 초록 | In recent year the scaling down of CMOS devices has revealed the limitation of SiO2 as gate dielectrics. For solving problems many high-k materials have been considered as a SiO2 replacement. On the other hand, lanthanum oxide (La2O3) thin film of the rare earth oxides is being considered for the gate dielectrics of MOSFETs in the next generation due to low leakage currents. And hafnium oxide (HfO2) thin film has been widely studied because of the high dielectric constant, a relatively wide band gap. In this work, we investigate one of the potential candidates for high-k dielectric, lanthanum hafnium oxide (LHO) thin film. LHO films were deposited by electron resonance plasma enhanced atomic layer deposition (ECRALD). From current-voltage (I-V) measurement of the LHO films, extremely low gate oxide leakage currents were observed. The capacitance–voltage (C-V) characteristics were analyzed at high frequency (1 MHz) with a sweep voltage. The current–voltage characteristics were obtained with HP 4155 semiconductor parameter analyzer to investigate the leakage current through the through the oxide film. |
| 저자 | 김웅선, 고명균, 김태섭, 박상균, 박종완 |
| 소속 | 한양대 |
| 키워드 | LHO; electron cyclotron resonance; atomic layer deposition; high-k dielectric |
