| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Development of new fabrication method for new concept anti-ESD photomask |
| 초록 | In the electronics industry, electrostatic discharge (ESD) damage causes billions of dollars loss a year. In case of photolithography process, patterns damages of the photomask due to ESD is a critical issue. So various ways using conductive material have applied to prevent, but don’t enough satisfy of market needs such as transmittance, adhesive strength with metal layer, manufacturing price and so on. In this paper, we’ve suggested a new concept anti-ESD photomask which can improve the problems of existing solutions. We applied indium-tin-oxide, as one of major transparent conductive materials, to structurally put it on only etched clear area for connecting Cr/CrO2 metal pattern to another pattern. To implement a new concept, we introduced the new method for manufacturing. A key technology in our research is to control the appropriate shape and gap-opening of the edge of photoresist on patterned-line for the desired connection of the transparent conductive material. And we’ve evaluated the optical, mechanical and chemical properties as well as the anti-ESD discharge performance. In a lot of ways, this new type anti-ESD photomask showed the higher reliable performance than the existing concepts. |
| 저자 | Jangsik In1, Byeongkyou Jin2, Daeyeol Yang3, Chunkil Park4, Ahyun Kwon1, Jungchul Park2, Daeyong Jeong3 |
| 소속 | 1NEPCO Co., 2Ltd., 3Korea, 4Republic of |
| 키워드 | Photolithography; Photomask; Electrostatic Discharge; UV-assisted Partial Strip |
