| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Electrical Features and Reliability of Ta2O5-based Conductive Bridge Random Access Memory |
| 초록 | Conductive bridge random access memory (CBRAM) has been researched as one of next-generation memories due to its high current density, high speed, simple structure of 4F2, and low power consumption. The formation and rupture of the filament caused by the movement of the metal cation in electrolyte layer has been well known for the switching mechanism of CBRAM. Originally, electrolyte layers were made with chalcogenides such as GeSe or GeS because of the high diffusivity of conductive metal ions such as Ag or Cu in them. However, a too high diffusivity causes too low switching voltage and unstability in CBRAM operation. Therefore, binary oxide materials have been suggested as an alternative. In this study, we present the electrical features of Ta2O5 working as a solid electrolyte, where the device of the structure of TiN/Ta2O5/CuTe by varying the pattern size of ranging from 34 nm to 1,921 nm was prepared. TaOx is one of the promising resistance switching materials because it can control the stable low-and high-resistance states and also shows long endurance and data retention. The Ta2O5 layer was deposited by RF magnetron sputtering on TiN bottom electrode patterned by photo lithography process. Then, a CuTe electrode was deposited by DC magnetron sputtering. Finally, TiN was deposited as a capping layer. The CuTe electrode was used to control the amounts of Cu cation diffusing into Ta2O5 oxide layer. To optimize the performance of Ta2O5-based CBRAM, the thickness of Ta2O5 and N2-annealing temperature were varied. We could achieve the performance of the optimized Ta2O5-based CBRAM with a set voltage of ~0.54 V, a reset voltage of -1.2 V and an on/off resistance ratio of ~ 1.13 × 104. In addition, the device showed set/reset endurance cycles of ~105 with 100-μs AC pulse-width and DC retention time of 105 s. Finally, the role of Ta2O5 thickness, and N2-annealing temperature on the electrical features was described. *This work was financially supported by the Ministry of Trade, Industry & Energy(MOTIE, Korea) under Industrial Technology Innovation Program (10068055) and the Brain Korea 21 Plus 2017, Republic of Korea. |
| 저자 | Myung-Jin Song1, Ki-Hyun Kwon2, Dong-Won Kim3, Hea-Jee Kim4, Hun-Mo Yang5, Jea-Gun Park6 |
| 소속 | 1Department of Nano-scale Semiconductor Engineering, 2Hanyang Univ., 3Seoul, 404763, 5Republic of Korea, 6Department of Electronics and Computer Engineering |
| 키워드 | <P>Ta<SUB>2</SUB>O<SUB>5</SUB>; Conductive Bridge Random Access Memory; CuTe; ReRAM; CBRAM; Oxide</P> |
