| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Effect of thermal annealing on the properties of polysilicon metal-semiconductor-metal photodetecotrs |
| 초록 | The effects of the post annealing temperatures on the electrical and interfacial properties of metal-semiconductor-metal photodetectors (MSM-PD) device were investigated. The MSM-PD device in this work were the structure of Al(500 nm)/Ti(200 nm)/poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM). Electrical characteristics of the MSM-PD were also carried out by using current-voltage (I-V) measurements. As the post annealing temperature increases, Intermetallic compounds of Al3Ti and Ti7Al5Si12 were observed at interface of the MSM-PD devices at the post annealing temperature of 350℃ and 400℃, respectively, resulting in the decrease in the electrical characteristic. The effects of the post annealing temperatures on the MSM-PD devices showed the different interfacial properties. |
| 저자 | Kyeong-Min Kim1, Jung-Yeul Kim2, You-Kee Lee3, Joon-Pyo Park2, Yong-Sun Choi4, Jae-Sung Lee2, Young-Ki Lee5 |
| 소속 | 1Department of Information &Electronics Engineering, 2Uiduk Univ., 3Devision of Green Energy Engneering, 4Division of Green Energy Engineering, 5Metallic Materials Research Group |
| 키워드 | MSM(metal-semiconductor-metal)Photodetector; Schottky contact; Intermetallic compound |
