화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터)
권호 41권 1호
발표분야 분자전자 부문위원회 I
제목 Morphology-driven high sensitivity polymer field-effect transistor based ammonia gas sensor
초록 In this work, cohesive energies of polymer semiconductors were tuned by strategically inserting buffer layers, which resulted in dramatically different semiconductor surface morphologies. Elucidating morphological and structural properties of polymer semiconductor films in conjunction with FET studies revealed that surface morphologies containing large two-dimensional crystalline domains were optimal for achieving high surface areas and creating percolation pathways for charge carriers. Ammonia molecules with electron lone pairs adsorbed on the surface of conjugated semiconductors can serve as efficient trapping centers, which negatively shift transfer curves for p-type PFETs. Therefore, morphology optimization of polymer semiconductors enhances their gas sensing abilities towards ammonia, leading to a facile method of manufacturing high sensitivity gas sensors.
저자 유성훈, 정대성
소속 중앙대
키워드 Ammonia gas sensor; high sensitivity; morphology control; polymer field-effect transistor; buffer layer
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