| 초록 |
Research has been rapidly grown on fabricating earth-abundant solar cells which can possibly replace CIGS-based cell. One of the candidate materials is Cu2ZnSn(S,Se)4 (CZTSSe). The detailed and comparative study on the application of atomic layer deposition (ALD)-based buffer layers on CZTSSe thin film solar cells is crucial to improve the cell efficiency. In this talk, I will first introduce the reaction mechanism of ALD and growth reaction of ALD-Zn(O,S) buffer layers. Structural, electrical, and optical properties will be reviewed and application of the new buffer layers to CZTSSe will be demonstrated. O/(O+S) ratio was found to influence the overall cell performance and XPS, J-V, and TEM analyses were used to correlate their relationship in-detail. |
