| 초록 |
Cu2ZnSn(S,Se)4 (CZTSSe) is an attractive alternative to CdTe, CIGS, and silicon-based solar cells. In this study, the Mg and Ga co-doped ZnO(MGZO) thin films that acting as a window layer in CZTSSe TFSCs were optimized to improve the device efficiency. MGZO thin films were deposited on a soda lime glass (SLG) substrate using radio frequency (RF) magnetron sputtering with the varying of the working pressure during the deposition. The structural, morphological, optical and electrical properties of MGZO thin films and the effect of CZTSSe TFSC on the efficiency of different process pressures were investigated. All of the deposited thin films showed a uniform microstructure, high optical bandgap energy of ~3.50eV with a transmittance of ~85% in the visible region, although they possess comparable resistivity differences. As the process pressure increases, the electrical properties of the thin film are greatly reduced. On the other hand, MGZO thin films proceeding at low process were showed improved electrical properties with the low resistivity, a high carrier concentration, a high mobility, and a low sheet resistance. These are resulted in improved device efficiency for CZTSSe TFSCs with deposited MGZO window layers due to their superior optoelectronic properties. These results show a very promising TCO materials for CZTSSe TFSCs applications. |
