| 초록 |
In this work, earth-abundant CZTSSe thin film solar cells were fabricated by sulfur-selenization of the Mo/Zn/Sn/Cu metallic precursors. The interfacial Mo(S,Se)2 layer is commonly observed in practical CZTSSe devices because of spontaneous reaction between S,Se and Mo back contact. The optoelectrical properties of Mo(S,Se)2 is highly dependent on the layer thickness. The influences of forming Mo(S,Se)2 layer were investigated by tuning amount of S,Se powder during selenization process. The highest power conversion efficiency was 8.44% and was achieved by the CZTSSe absorber layer using 0.05g sulfur, selenium powder. The surface and cross-sectional morphology of films were observed using a Scanning electron microscope(SEM). To verify how to have an effect Mo(S,Se)2 layer on optoelectrical properties of solar cell, Dark I-V and Hall measurement were used. Through these results, we discuss how Mo(S,Se)2 layer affect performance of TFSC. |
