| 초록 |
We have fabricated flexible Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells (TFSCs) with Zn(O,S) buffer layer. Generally, CdS buffer layer has been used to fabricate high efficiency CZTSSe solar cell. However, the band gap of CdS is 2.42 eV and CdS is toxic materials. Among alternative buffer layers, the Zn(O,S) buffer layer has become more successful to realize high efficiency CZTSSe solar cell. In thin work, we have studied the effect of Al2O3 passivation layer on CZTSSe TFSCs depositd on molybdenum (Mo) foil substrate. When we apply the Zn(O,S), there are some problems such as Voc deficit, recombination. So, the deposition of Al2O3 passivation layers have been expected reduce interface recombination at the top surface heterojunction, thus significantly reducing the Voc deficit. The formation of CZTSSe absorber layers was carried out by annealing process of the sputter deposited precursors in sulfur-selenium atmosphere using custom-built rapid thermal annealing (RTA) system. And then, Al2O3 layers prepared by atomic layer deposition (ALD). Also, Zn(O,S) buffer layers were deposited using ALD. More optimistic and comparatively outstanding results have been expected for Al2O3 passivation layers by investigating using different analytical techniques. |
