| 초록 |
The use of Cu interconnects requires the barrier layer to prevent diffusion of Cu atoms into its surroundings. In general, the barrier layer increase the electrical resistance of Cu, especially when Cu interconnect is scaled-down to nanoscale, which could severely degrade the performance of the circuits. In recent, graphene has attracted attentions as a potential candidate for barrier layers due to its excellent electrical properties and barrier properties. However, the effects of graphene barrier layer on the electrical properties of Cu interconnects is not fully understood. Here, we investigated the effects of graphene on the resistivity of graphene-contacted Cu. The resistivity of graphene-contacted Cu decreased to 15% compared to non-contacted Cu because graphene provided additional conduction path near the grain boundary with high resistivity. Lastly, we found that graphene also improves the bending stability of graphene-contacted Cu by bridging between the cracks formed in Cu. |
