| 학회 |
한국재료학회 |
| 학술대회 |
2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 |
12권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Effects of annealing on the resistivity and transmittance properties of Ga-doped ZnO films |
| 초록 |
Effects of annealing on the electrical resistivity and transmittance properties of Ga-doped ZnO (GZO) thin films deposited on glass by rf magnetron sputtering were investigated. The electrical resistivity of on GZO thin film is effectively decreased by annealing in a reducing atmosphere such as N2+5%H2. This is attributed to passivation of grain boundaries and zinc ions by hydrongen atoms resuting in increases in carrier concentration and mobility. However, annealing at a temperature higher than 400℃ is less effective. The lowest resistivity of 2.3×10-4Ωcm is obtained by annealing at 400℃ in an N2+5%H2 atmosphere. The optical transmittance of the GZO film is improved by annealing regardless of the annealing atmosphere. Annealing in N2+5%H2 atmosphere widens the optical band gap, while annealing in an O2 atmosphere makes the band gap narrower, which can be explained as a blue shift phenomenon. |
| 저자 |
Keunbin Yim, Sookjoo Kim, Hyoun Woo Kim, Chongmu Lee
|
| 소속 |
인하대 |
| 키워드 |
Ga-doped ZnO; electrical resistivity; transmittance; annaling atmosphere; annealing temperature
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| E-Mail |
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