| 학회 | 한국재료학회 |
| 학술대회 | 2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 | 14권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | Properties of lanthanum oxide deposited by electron cyclotron resonance atomic layer deposition |
| 초록 | As the downsizing tend of MOSFET is continuous, a gate oxide with a thickness of 1nm or less is required for sub-0.1 µm devices. However, scaling down of the SiO2 gate oxide reaches a physical thickness limit. High-k materials such as Al2O3, Ta2O5, HfO2, and La2O3 have drawn as a great deal of interest as the gate oxide for advanced MOSFET devices. La2O3 is one of the promising gate dielectric because of its high dielectric constant, good metal oxide semiconductor capacitor performances, and high crystalline temperature. In this work, La2O3 thin films were deposited by electron cyclotron resonance atomic layer deposition (ECR-ALD). La(i-PrCp)3 (Tris(i-propylcyclopentadienyl)lanthanum) were utilized as the lanthanum precursor. Rapid thermal annealing(RTA) induced dramatic changes in the electrical properties of the La2O3 films. We investigated the structural and electrical properties with transmission electron microscopy (TEM), X-ray diffractometer (XRD), and current-voltage(J-V) and capacitance-voltage(C-V) measurements. From I-V measurement of the La2O3 films, very low gate oxide leakage currents were observed. The C-V characteristics were analyzed at high frequency (1MHz) with a voltage sweep. The C-V and leakage current measurements were obtained by Agilent B1500A. the EOT was calculated using the CVC program. Crystallity of the films were checked by X-ray diffractometer (XRD). The film thicknesses with respect to the number of ALD cycles and structures were observed using cross–sectional transmission electron microscopy(FETEM, Tecnai F30 S-Twin) images and an ellipsometer(Rudolph AutoEL-II). |
| 저자 | Byung-woo Kang1, Woong-sun Kim2, Dae-yong Moon3, Jong-wan Park1 |
| 소속 | 1Division of Materials science and engineering, 2Hanyang Univ., 3Korea |
| 키워드 | lanthanum oxide; high-k dielectric; ECR; ALD |
