| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Passivation and patterning of solution processed Zinc Oxide thinfilm using polyelectrolyte for low temperature transistors |
| 초록 |
High-performance field-effect transistors (FETs) based on polyelectrolyte gate dielectric and sol-gel zinc oxide (ZnO) thinfilm were fabricated on a flexible polymer substrate. It is demonstrated that UV-crosslinked ionic gel for high-k dielectric material enabled low temperature and patterning of transistor arrays. Complete I-V-measurements revealed the subthreshold swing of 2V/dec, the on/off current ratio of 5*10^4, the threshold voltage of 2V and the carrier mobility of 1cm^2/Vs, which is the highest mobility of low temperature processed np-ZnO FETs reported to date. Our results suggest that patterned ZnO thinfilm using pre-designed hydrogel dielectric is a cheaper, more convenient, and more efficient method than other patterning and passivation treatment for improving device performance. |
| 저자 |
최원진, 이태일, 박지호, 오진영, 백홍구
|
| 소속 |
연세대 |
| 키워드 |
Zinc Oxide; Transistor; Low temperature; Sol-gel; Solution process
|
| E-Mail |
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