화학공학소재연구정보센터
학회 한국재료학회
학술대회 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔)
권호 27권 2호
발표분야 특별심포지엄 3. 나노기술 기반 초고속 광정보 소자 심포지엄-오거나이저: 송용원(KIST)
제목 Heterogeneous integration for integrated photonics
초록  Heterogeneous integration is indispensable for high-performance active devices for an integrated photonics platform. We have demonstrated many applications of heterogeneous integration for optical switches, lasers, and detectors. Among them, a semiconductor-insulator-semiconductor (SIS) optical phase shifter allows us an efficient optical phase shift scheme for optical modulators and switches thanks to its large accumulation capacitance. To enhance its free-carrier effects, a III-V/Si hybrid SIS capacitor has been proposed owing to its light electron effective mass [1]. Recently, there are also suggestions on large-scale switching arrays and neuromorphic photonics using this efficient hybrid SIS phase shifter [2]. To achieve efficient and multi-functional optical phase shifters for these applications, the non-volatile or bi-stable operation of the optical phase shifter is widely investigated using a phase-change material (PCM) [3] or a ferroelectric BaTiO3 (BTO) [4]. However, these approaches have several problems, such as high loss due to the metal phase of PCM and non-CMOS-compatible materials or processes, especially for front-end-of-line (FEOL). To overcome these problems, we have suggested a non-volatile phase shifter with a series connection of the ferroelectric hafnium-zirconium oxide (HfZrO2; HZO) capacitor [5, 6]. This non-volatile operation can be a promising solution for multi-functional optical phase shifters.

[1] J.-H. Han et al., Nature Photonics 11, 486 (2017).  
[2] M. Takenaka et al., Journal of Lightwave Technology 37, 1474 (2019).  
[3] H. Zhang et al., Optics Letters 43, 5539 (2018).  
[4] P. Stark et al., OFC, 2020, M2I.4.  
[5] S.-M. Han et al., OFC, 2021, W6A.29
[6] J.-H. Han et al., GFP, 2021, ThA3


ACKNOWLEDGMENT
This work was supported in part by the KIST Flagship Research Program under Grant 2E31011, and in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government Ministry of Science, ICT and Future Planning (MSIP) under Grant 2019M3F3A1A0207206912.  
저자 Jae-Hoon Han
소속 Center for Opto-Electronic Materials and Devices
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