| 초록 |
Here, we suggest a new technology to achieve high-mobility and good operational stability in solution-processable metal-oxide thin-film-transistors (TFTs). Indium-tin-zinc-oxide (ITZO) and indium-gallium-zinc-oxide (IGZO) bilayer is used to form heterostructures and corrugated structure includes alternative thin ITZO-IGZO and thick ITZO–IGZO bilayer region, acheiving moderate off-current and high on-current by the best use of individual region and vertical modulated interface. The optimum corrugated heterostructure TFTs exhibit a maximum field-effect mobility greater than 50 cm2 V-1 s-1 with an on/off current ratio of ＞ 1E6 and good operational stability (threshold voltage shift＜ 1V). To verify the mechanism of the corrugated structure, we conducted various analysis chemically, physically and by computer modeling. The analysis results reveal that origins of high electrical performance of the designed structure studying by gate bias sweep operations. |
