| 초록 |
Hydrogensilsesquioxane(HSQ) has been widely used as insulating material in memory device and found to have a low dielectric constant (k) compared with the conventional insulating material, SiO2. The main factors governing the performance in dielectric materials is a high degree of planarization, good mechanical properties and storage stability, and low k value. In this study, we synthesized triethoxysilane(TES)-tetraethylorthosilicate(TEOS) copolymers by sol-gel method in order to enhance the mechanical properties and storage stability, simultaneously maintaining low k value. Nanoindenter and viscometer experiments showed that mechanical strength and storage stability of TES-TEOS copolymer thin films was highly enhanced compared to neat HSQ materials. These unique properties in TES-TEOS copolymer systems are believed to be due to the increase in portion of Si-O-Si chain. Our study presents initial results that provide some insight into structure-property relationship. |
