| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Utilizing p-type Mn doped tin oxide as hole transport layer for organic photovoltaic cells |
| 초록 |
Organic photovoltaic cell (OPVs) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. The use of highly transparent oxide thin films for this application increased design flexibility and improved chemical stability. Here we present our investigation of sputtered Mn:SnO2 (MTO) thin films are incorporated in organic bulk-hetero-junction photovoltaic cell as the hole transport layer (HTL). Instead of PEDOT:PSS hole transport layer the Mn:SnO2 thin films were manufactured various thicknesses, and evaluated as the HTL in P3HT:PCBM photovoltaic devices. In case that an optimized thickness (~150nm) of the MTO layer is incorporated in the OPVs with a structure of ITO/MTO/P3HT:PCBM/Al, the efficiency is 1.53%. Therefore, the stability of OPV utilizing MTO is significantly enhanced due to the air- and acid-stability of the MTO layer itself. Conclusively, we find sputtered MTO layers can be prepared easily, act as an efficient HTL, and afford a much higher stability than PEDOT:PSS layers. |
| 저자 |
Chil-Hyoung Lee1, Dong-Ick Son1, Doo-Jin Choi2, Young-Jei Oh1
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| 소속 |
1Korea Institute of Science and Technology, 2Yonsei Univ. |
| 키워드 |
Organic photovoltaic cells; Hole transport layer; P-type transparent oxide semiconductor
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| E-Mail |
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