| 초록 |
Recent progress in the synthesis and characterization of one-dimensional nanoscale material such as ZnO, and its potential application in constructing nanoscale electronic and optoelectronic devices. Furthermore, for the realization of nanodevices, it is essential that the periodicity and patterns could be controlled and designed with deliberate control over interfeature distance, positions, shape, and orientation controlled ZnO nanowire/nanorod arrays. However, the fabrication of vertical aligned ZnO nanowires comprises high growth temperature and both alkali and acidic medium attacks ZnO as well. Hence, the convention lift-off materials are not suitable for the processing of ZnO nanowires. Herein, we have introduced a new lift-off technique to pattern ZnO nanowires without using any metallic catalyst. The sacrificial layer has high temperature stability and the solvent used to remove sacrificial layer, does not attack ZnO nanowires, which is the major advantage of this technique. |
