| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory based on Single Crystalline Triisopropylsilylethynyl Pentacene Field Effect Transistor |
| 초록 |
We develop a new type of non-volatile ferroelectric P(VDF-TrFE) memory based on Organic Thin Film Transistor (OTFT) with single crystal TIPS-PEN active layer. A bottom gate OTFT was fabricated with thin P(VDF-TrFE) film gate insulator on which 1D ribbon type single crystal TIPS-PEN grown via solvent exchange method. As consequences a memory device exhibits stable source-drain current modulation with the hysteresis ON/OFF ratio larger than 1000, superior to a ferroelectric P(VDF-TrFE) OTFT with vacuum evaporated pentacene layer. Data retention longer than 5x10000 seconds was achieved in ambient condition by incorporating an interlayer between gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days. The deposition of a seed solution of TIPS-PEN on chemically micropatterned surface allows us to fabricate the arrays of single crystal TIPS-PEN that can be useful for integrated arrays of ferroelectric polymer memory TFTs. |
| 저자 |
강석주, 배인성, 박연정, 성진우, 박철민
|
| 소속 |
연세대 |
| 키워드 |
P(VDF-TrFE); FeFET; TIPS-pentacene
|
| E-Mail |
|
