| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 봄 (04/08 ~ 04/09, 대전컨벤션센터) |
| 권호 |
35권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Fabrication and Characterization of Ferroelectric Capacitors Based on Poly(vinylidene fluoride)-Organically Modified Silicate Thin Films |
| 초록 |
Poly(vinylidene fluoride)-organically modified silicate(PVDF-OMS) thin films were fabricated on fluorine-tin oxide coated glass, P+- and P++-silicon wafers, and poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) coated glass through heat controlled spin coating, at 60 oC, from N,N-dimethylactamide solution. PVDF-OMS films were crystallized into electrically active β- and γ-phases, irrespective of substrates used, which is the prerequisite for the fabrication ferroelectric device architectures. Metal-ferroelectric-metal and metal-ferroelectric-semiconductor capacitors with gold top electrode will be subjected to P-E hysteresis and C-V measurements to investigate their ferroelectric memory characteristics. The surface topography of PVDF-OMS films will also be studied to evaluate its role on device characteristics. Acknowledgement : This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (R11-2005-065). |
| 저자 |
RAMASUNDARAM1, 김유민2, 안유진1, 이종순3, 김갑진4
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| 소속 |
1경희대, 2LS전선 기반기술연구센터 고분자연구그룹, 3Analytical Research Center, 4Central Research Center |
| 키워드 |
Ferroelectric; Capacitor; PVDF; OMS
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| E-Mail |
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