| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 | 30권 2호 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Submicron- and Nano-scale Patterning of Polydimethylsiloxane Resist Structures on Electronic Materials using Decal Transfer Lithography and Reactive Ion Etching |
| 초록 | We have developed a novel technique for the fabrication of submicron- and nano-sized high-aspect-ratio polydimethylsiloxane (PDMS) resist patterns on electronic material substrates using decal transfer lithography (DTL) in conjunction with reactive ion etching (RIE). The DTL technique, based on the transfer of PDMS decal patterns to a substrate via the engineered adhesion and release properties of a compliant PDMS stamp, is useful for delivering micron-sized PDMS patterns onto targeted substrates. Submicron-sized patterns are more difficult to transfer due to the limitations of the mechanical properties of the polymer. RIE has been used in conjunction with DTL patterning to overcome this difficulty by removing a supporting top-side PDMS thin-film to reveal conventional resist structures. To illustrate the applicability of this method to the fabrication of electronic devices, a silicon-based thin-film transistor has been fabricated from a silicon-on-insulator (SOI) wafer using DTL and RIE. This work has been performed at UIUC and financially supported from Dow Corning Corporation. All data belong to UIUC and Dow Corning Corporation. |
| 저자 | 안희준1, Anne Shim2, Ralph G. Nuzzo3 |
| 소속 | 1한양대, 2Dow Corning Corporation, 3Univ. of Illinois at Urbana-Champaign |
| 키워드 | soft lithography; decal transfer lithography; reactive ion etching |
