| 초록 |
Dust generated during metal organic chemical vapor deposition (MOCVD) process of LED manufacturing, contain significant amounts of gallium and indium is an important resource for recovery. To recover gallium and indium by hydrometallurgy process, leaching is the primary stage. In our current investigation possible process for quantitative leaching of gallium and indium from these MOCVD dusts of LED industry waste has been developed. The MOCVD waste dust contains gallium as GaN and Ga0.97N0.9O0.09. Primarily for quantitative recovery of gallium, a process flow sheets have been proposed for quantitative leaching from the MOCVD waste dust. In this process first of all the Ga0.97N0.9O0.09 of the waste MOCVD dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na2CO3, ball milled followed by annealing, again leached to recover gallium and indium. |
