| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Comparison of existing methods to identify the number of MoS2 layers |
| 초록 |
MoS2 crystals at atomic level have been identified as flexible semiconductors with remarkable physical properties which makes it an important material for crucial studies to find its potential applications. These characteristics change with the number of MoS2 layers, and thus an accurate, easy and non-destructive method to estimate the number of MoS2 layers is essentially required. Though there are several techniques available for this purpose, these current methods have certain drawbacks and limitations. The most accurate TEM method allows actual counting of MoS2 layers; is a very complicated technique that requires processing of the MoS2 sample to the point where it will no longer be useable after characterization. The AFM measurement for multilayer MoS2 thickness particularly in the tapping mode is likewise time consuming and suffers from certain anomalies caused by improperly chosen free amplitude values for the cantilever. Raman Spectroscopy is a quick characterization method to identify a single to few layers of MoS2 but the difference between five and more layers of MoS2 in Raman spectra is insufficient to accurately distinguish them. Also, optical microscope is a simple, efficient and nondestructive technique that enables rapid characterization of multilayer MoS2 but the image contrast values will bring error to the data. To overcome these limitations, a combination of these methods will provide more direct approach to identify the number of layers. |
| 저자 |
라케쉬 사르비드레1, 이창준2, 김택남1, 홍성구2
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| 소속 |
1배재대, 2한국표준과학(연) |
| 키워드 |
number of MoS<SUB>2</SUB> layers; optical microscopy; Raman spectroscopy; AFM
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| E-Mail |
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