| 학회 | 한국재료학회 |
| 학술대회 | 2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 | 15권 2호 |
| 발표분야 | G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 | The characterization of amorphous and nanocrystalline Si thin films by reactive particle beam assisted chemical vapor deposition |
| 초록 | For the thin film transistor (TFT) materials, amorphous silicon have been studied extensively as a basic material with low cost process for large sized flat panel display applications. But because amorphous silicon device has low carrier mobility, temporal stability, many trap site, amorphous silicon TFT shows incomplete hydrogen passivation yield, limited carrier transport and time dependent threshold voltage shift. In this work, we have been using a reactive particle beam (RPB) source, which can control the energy of being deposited particle, in order to deposit nanocrytalline silicon thin film. The nanocrystalline silicon TFT which has better carrier mobility and stability than amorphous Si was studied to overcome the intrinsic and critical problems of amorphous silicon. The reactive particle beam source consists of internal antenna for inductively coupled plasma and a metal reflector. The reflector bias energy controls kinetic energy of RPB source. The RPB with proper kinetic energy can supply sufficient heating energy underlying thin film for enhancing the crystalline fraction without additional substrate heating or with lower heating than conventional plasma enhanced chemical vapor deposition process for nanocrystalline silicon thin film. So by RPB assisted chemical vapor deposition system, the reactive particles can induce crystalline phase in Si thin films effectively. Crystal structure of amorphous silicon and nanocrystalline silicon thin films was measured by X-ray diffractometor and Raman spectroscopy, and transmission electron microscopy. Sheet resistances and carrier densities of nanocrystalline silicon films were measured by current-voltage measurement system consisting of semiconductor analyzer (HP 4145B) and optical band gap was measured by ultra-violet visible spectrophotometer. Chemical bonding character was also analyzed X-ray photoelectron spectroscopy and near edge x-ray absorption fine structure. |
| 저자 | 최선규1, 왕석주1, 홍문표2, 권광호2, 박형호1 |
| 소속 | 1연세대, 2고려대 |
| 키워드 | TFT; amorphous silicon; nanocrystalline silicon; reactive particle beam |
