| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Improved on-off ratio of non-volatile resistive memories based on semiconductor/insulator blends |
| 초록 | A resistive random access memories (ReRAM) cell composed of an oxide materials or semiconductor or insulator sandwiched between two metallic electrodes. It has several advantages such as its low-power consumption, high operation speed, long retention time, etc. A key feature of ReRAM is resistive switching behavior between two stable resistive states (low and high) by applying appropriate voltage pulses.. ZnO exhibits resistive switching characteristics with either unipolar or bipolar resistive switching behaviors; however,. ZnO has serious disadvantages such as low retention time and endurance. Here we report on improvement of retention characteristic via mixing ZnO nano-particles with P(VDF-TrFE) polymers, which has a large spontaneous polarization and excellent chemical stability. The ReRAM cells with P(VDF-TrFE) mixed with 5wt% : ZnO nano-particles were fabricated on n++ Si substrates. The blending solution was deposited by spin coating at 3500 rpm for 30 s, which was then followed by annealing on a hotplate at 140oC for 30 s. We observed ON/OFF ratio of approximately 105 with nanocomposites film. |
| 저자 | Tae Yeon Kim1, G. Anoop2, Ji Young Jo1 |
| 소속 | 1School of Materials Science and Engineering, 2Gwangju Institute of Science and Technology |
| 키워드 | resistive random access memories; retention characteristic; on/off ratio |
