| 초록 |
Recently, there is an increasing interest in the development of Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells on flexible metallic foils for photovoltaic (PV) applications due to their low cost, light weight, excellent radiation hardness, high optical absorption coefficient (＞10-4cm-1) and suitable band-gap energy (1~1.5 eV). The use of flexible substrates for CZTSSe TFSCs have been expected to broaden its application area extensively due to the flexibility and versatility. Particularly, we studied the effect of diffusion barrier on the properties of CZTSSe TFSCs. Since, diffusion barrier acts as an electrical insulator and works as a diffusion barrier for the impurities from the stainless-steel. In this work, we have studied the effect of i-ZnO diffusion barrier thicknesses on CZTSSe TFSCs deposited on molybdenum (Mo) coated stainless-steel substrates. The formation of CZTSSe absorber layers was carried out by annealing process of the sputter deposited precursors in sulfur-selenium atmosphere using custom-built rapid thermal annealing (RTA) system. Furthermore, comparative study with CZTSSe TFSCs deposited on soda line glass substrate was also conducted. CZTSSe thin films were investigated using X-ray diffrfaction (XRD), Raman spectroscopy, X-ray fluorescence spectrometer (XRF), Field-emission scanning electron microscope (FE-SEM), and High-resolution transmission electron microscope (HR-TEM). Further detailed analysis and study of the properties of flexible CZTSSe TFSCs will be discussed. |
