| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 봄 (04/22 ~ 04/23, 대구 EXCO) |
| 권호 |
16권 1호, p.830 |
| 발표분야 |
재료 |
| 제목 |
SiO2 Etching Studies in Inductively Coupled C4F6 Plasma |
| 초록 |
Low pressure fluorocarbon plasmas are commonly used in microelectronics fabrication of plasma etching of dielectric materials such as silicon dioxide and silicon nitride. Recently, one of the critical issues in fluorocarbon plasma is to achieve the deep contact etching with the ultra high aspect ratio due to the decrease of the design rule up to few ten nanosize. In these processes, the fluorocarbon gases have been used with numerous additives (e.g., O2, CO, and Ar) to optimize the reactant fluxes and delivery of activation energy. Due to the inherent complex plasma chemistry, the process engineers still suffer from the absence of the robust and predictable modeling tools in this field. In this work, we present results from a computational and experimental investigation of the plasma chemistry and surface reactions in ICP (Inductively Coupled Plasma) sustained in Ar/C4F6/O2 mixtures. Our strategy was to validate the model using measurements first made in only C4F6 ICPs, and then in plasma with more complex chemistry such as Ar/C4F6, C4F6/O2 and Ar/C4F6/O2 mixtures. |
| 저자 |
채화영1, 장원석1, 유동훈2, 김진태1, 윤정식3, 임연호1
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| 소속 |
1전북대, 2경원테크, 3국가핵융합(연) |
| 키워드 |
plasma; etch; fluorocarbon; silicon oxide
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| E-Mail |
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| 원문파일 |
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