| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Vertical growth of Si nanowires via control of dilute gas ratio |
| 초록 |
Silicon nanowires(SiNWs) have received considerable attention such as field effect transistor and sensors. For ultra-large scale integration devices, SiNWs have to be grown vertically. We show that large-scale desired SiNWs have been synthesized by thermal chemical vapor deposition using SiCl4 gas from 800 to 900℃ varying the condition of H2/Ar ratio used as dilute gas. In H2 rich or only Ar atmosphere, SiNWs are grown without substrate orientation dependence. SiNWs could be grown vertically when Ar/H2 ratio is larger than 2. Scanning electron microscopy and Energy dispersive X-ray spectroscopy analysis have been employed to characterize the SiNWs. |
| 저자 |
Han-Don Um1, Yang-Gyoo Jung2, Sang-Won Jee1, Hong-Seok Seo2, Jung-Ho Lee1
|
| 소속 |
1Dept. of Fine Chemical Engineering, 2Hanyang Univ. |
| 키워드 |
silicon nanowire; dilute gas; Ar; H2
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| E-Mail |
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