| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Characteristics of Tin Sulfide Grown Thin films using Tetrakis(dimethylamino)Tin and Hydrogen Sulfur by Atomic Layer Deposition |
| 초록 | Recently, renewable energy resources including geothermal, wave force, wind force, biomass, and solar energy have been most actively studied to solve exhaustion of resource. Solar energy has been studied because it is infinitely reproducible and possesses no limitation for location. Copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) solar cells with cadmium sulfide (CdS) buffer layer in field of thin film solar cell have many advantages high power conversion efficiency due to the relatively low production cost, strong absorption, and suitable optical bandgap. Therefore, they many research groups have been studied most intensively. However, they have been facing repeated problem such as toxicity of Cd and the scarcity of In, Ga, and Te. In order to solve these problems, importance for non-toxic, earth-abundant, and inexpensive materials is on the rapidly increase. The absorber alternative materials is mentioned Cu2O, Cu2S, FeS2, Cu2ZnSn(SxSe1-x)4, ZnSnP, and SnS. Especially, SnS is p-type semiconductor, and has optical bandgap of 1.0-1.5 eV and high absorption coefficient. As alternative materials of buffer layer, ZnS, ZnO, ZnSe, In2S3, SnS2 can be used as buffer layer to reduce environmental impact and toxicity in vacuum process. Of these, SnS2 has n-type property, 2.2-2.4 eV optical bandgap, and is useful for the buffer layer because it provide an effective electron transfer at the interface due to an appropriate energy level distribution between active and absorber layer. In this study, we studied properties of tin sulfides (SnSx=1,2) films using Tetrakis(dimethylamino)tin (TDMASn, [(CH3)2N]4Sn) precursor and hydrogen sulfide (H2S) gas by thermal atomic layer deposition (ALD). ALD is a deposition method used to growth thin films based on self-limiting and sequential process in chamber. ALD has many advantages such as accurate thickness control, relatively high uniformity and quality at low process temperature, and extremely conformal thin films compared to other deposition methods. We deposited 50 nm-thick SnSx films using optimized sequence at various temperatures. For the more, this ALD process allows one to tune the composition of SnS and SnS2 relatively simply by varying the process temperature. The SnSx films deposited by ALD were analyzed by field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and ultraviolet visible (UV-vis). |
| 저자 | 함기열, 신석윤, 박주현, 오주홍, 전형탁 |
| 소속 | 한양대 |
| 키워드 | SnSx; ALD; Temperature; Bandgap |
