| 학회 |
한국재료학회 |
| 학술대회 |
2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 |
21권 2호 |
| 발표분야 |
A. 전자/반도체 재료 |
| 제목 |
Growth and Structural characterization of InAsSb/GaSb epilayer for mid - infrared applications |
| 초록 |
Heterostructure InAsxSb1-x epilayer were growth lattice - matched to (100) GaSb substrate by Solid Source Molecular Beam Epitaxy(SS-MBE). The layer structure consisted of a 300 nm thickness of GaSb buffer layer growth at 485 oC and a 200 nm thickness of epitaxial InAsSb layer. We have grown an InAsSb epilayer as a function of growth temperature (TG) ranging from 360 to 468 oC with similar growth rate 0.4 ML/s of InAsSb and 6.5x10-7 torr of As flux. The structural properties were measured by characteristic High Resolution X - ray Diffraction (HR-XRD) and Atomic Force Microscopy (AFM) technique, where the epilayer quality showed the improved at higher TG of 468 oC compared with 360 oC. Also, the As concentration of epitaxial InAsxSb1-x/GaSb composition lattice - matched to GaSb is demonstrated over the range 0.896 ≤ x ≤ 0.937 from characteristic rocking curve. |
| 저자 |
Lee Sang Jun1, Kim Jun Oh1, Kim Eui-Tae2, Han Im Sik1, Nguyen Tien Dai1
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| 소속 |
1Korea Research Institute of Standards and Science, 2Chungnam National Univ. |
| 키워드 |
InAs<SUB>x</SUB>Sb<SUB>1-x</SUB>; MBE; lattice matched; mid infrared
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| E-Mail |
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