화학공학소재연구정보센터
학회 한국재료학회
학술대회 2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원)
권호 14권 2호
발표분야 반도체재료
제목 Surface charateristics of sputtered Ta, Ti as barrier layer for copper deposition
초록  For smaller chips, all parts of semiconductor become smaller, and, accordingly, interconnection lines are thinner. But aluminum, existing interconnection metal, confronts of the limits, electromigration(EM) and resistivity problems like. Therefore, alternating metals are researching, and copper is one of those. But copper deposits on silicon or silicon dioxide(SiO2), it diffuses into substrates. Because of that, barrier layer is essential for copper deposition on specific substrate, like silicon. Barrier layer generally adopted metal series or its nitrides, like Ti, Ta, Ru or TiN, TaN, etc. Among them, after choosing a tantalum and titanium, compared surface characteristics of sputtered Ta, Ti on Si(100) against those of bare Si(100) and predicted advantages in deposition process of copper.
저자 이도한, 진성언, 김영석, 변동진
소속 고려대
키워드 interconnection; copper; tantalum; titanium
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