| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Fabrication of Zinc Telluride TFT Channel Layer on Non-conductive Substrate by Anisotropic Lateral Electrochemical Deposition |
| 초록 | Thin Film Transistor(TFT) is core of semiconductor technology, and used for various semiconductor devices. TFT have been fabricated by amorphous Si or polycrystalline Si. However, because silicon is required to high cost and process temperature, there were researches for find candidate materials which is organic, organic-inorganic hybrid materials, carbon nano-tube and etc. Although many candidates, they has limitations for using commercial devices. Metal chalcogenides are attractive materials because of their properties that effective cost, high carrier mobility even polycrystalline, and low process temperature. Among of them, Zn-based chalcogenides were remarkable materials because zinc was inexpensive and abundant. Zinc Telluride(ZnTe), one of zinc-based chalcogenides, was commonly known as p-type II-VI compound semiconductor, and has potential candidate as the buffer layer of solar cell, light emitting diodes, and thin film transistor due to its wide band gap of 2.26eV, and their high mobility (100cm2V-1s-1 as a bulk form). The preparation of ZnTe thin films has been carried out through metal-organic chemical vapor deposition, atomic layer deposition, molecular beam epitaxy, pulsed-laser deposition, chemical bath deposition, and electrodeposition. Among these methods, electrodeposition, solution-based deposition method, is a promising method, because it is easy to deposit large area and low energy cost due to selective deposition on conducting substrate. Despite of many advantages, electrodeposition of TFT devices have been not researched since electrodeposition is possible only on conducting substrate. However, anisotropic lateral electrochemical deposition which is ZnTe growth along the surface of non-conductive substrate makes TFT device fabrication possible. In this research, Mechanism of ZnTe anisotropic lateral growth was studied, and deposited ZnTe layers were characterized by scanning electron microscope(SEM), transmission electron microscope(TEM), and X-ray energy dispersive spectroscopy(EDS). To improve ZnTe layer quality, annealing effects were confirmed, and finally TFT properties were researched by semiconductor parameter analyzer. |
| 저자 | 박기문, 김동욱, 유봉영 |
| 소속 | 한양대 |
| 키워드 | Zinc telluride; Chalcogenide; Lateral growth; Electrodeposition; Thin film transistor |
