| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Photo-curable anthracene containing polybenzoxazole gate dielectric for solution-processible metal-oxide TFTs |
| 초록 |
Recently, with the rapid increase of the necessity for low price and large area printed electronics such as thin-film transistor (TFT), a lot of researches on development of solution processible organic or inorganic semiconductors and gate dielectrics are being conducted. Organic thin-film transistor is applicable to flexible electronic materials with relatively lower carrier mobility than other TFTs. Therefore, there are active studies using solution processible metal-oxide semiconductors for high performance TFTs. In this study, we investigated the high thermal and chemical resistant polymeric gate dielectrics for solution processible metal-oxaide TFT. For the high packing density of dielectric film, we introduced a photo-curable anthracene moiety into the polybenzoxazole. In this presentation, we’ll discuss the synthetic result and their insulating properties with MIM device. |
| 저자 |
서민혜1, 김희선1, 장광석1, 이미혜1, 김태동2, 가재원1
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| 소속 |
1한국화학(연), 2한남대 |
| 키워드 |
TFT; anthracene; polybenzoxazole
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| E-Mail |
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