| 초록 |
The effects of insertion Al2O3 layer into TiO2 on EOT and leakage current was investigated. The dielectric constant of TiO2 is very high but its leakage current property is poor. In order to improve leakage current, Al2O3 layer is inserted into TiO2 Film. As thickness of inserted Al2O3 layer increase, leakage current is decreased effectively because Al2O3 layer prevent Pool-Frenkel conduction mechanism. TiO2(4nm)/Al2O3(1.2nm)/TiO2(4nm) nano-laminated film was suggested as an optimal structure and that gave EOT=0.9nm and with a leakage current of 7×10–7 A/cm2 at 1 1V. |
