| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Effect of Nb doping of the gas sensing properties of 2D-MoSe2 films |
| 초록 | Molecule sensing of transition metal dichalcogenides (TMDs: MX2, M =W, Mo, X = S, Se, Te) have been widely used in gas sensors owing to their strongly sensitive surface properties and semiconducting properties.[1,2] In particular, the TMD materials has been still highlighted of enhancing gas sensing response and long-term stability. In this study, we demonstrated highly sensitive and stable gas sensing properties of Nb-doped MoSe2 (MoxNb1-xSe2) using combination of a chemical vapor deposition and plasma enhanced atomic layer deposition methods. Concentration of Nb dopants to MoSe2 matrix strongly correlated the gas sensing property. Furthermore, Nb doping concentration caused the better response of gas detecting among all the devices. We also investigated that Nb-doped MoSe2 device exhibits better response rather than that of the bare MoSe2 device. By doping 2D layered MoSe2 with Nb dopant, we could achieve stable gas response as well as a long-term stability. The Nb dopants could decrease the oxidation of the MoSe2, leading to enhancement in gas response and long-term gas sensing stability. This strategy paves a new path for the realizing high-performance gas sensing devices. Furthermore, this novel concept would be effective approach to other semiconducting TMD layered family materials. |
| 저자 | 최선영1, 권정대1, 조병진2 |
| 소속 | 1재료(연), 2충북대 |
| 키워드 | <P>TMD; 2D; MoSe2; gas sensor; gas sensing</P> |
