| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Layer control synthesis of MoS2 by sulfurization of ultrathin molybdenum film |
| 초록 |
Molybdenum disulfide (MoS2) has significant importance in the family of two dimensional transition metal dichalcogenides (TMDs) due to its direct band gap property after successful exfoliation of graphite into single atomic thin layer. In vapor phase growth, synthesis of high quality and thickness control MoS2 has been remained a challenging process. In this work, two dimensional MoS2 has been synthesized by sputtering and sulfurization in quartz tube furnace. Thickness of MoS2 film was dependent on the thickness of pre deposit sputter film. Quality of film has been improved by optimizing the temperature and pressure in the quartz tube furnace. Raman spectroscopy was used to measure the thickness. Films synthesis at 750 °C and 10 torr pressure exhibited a 20 cm-1 difference between two Raman mode, in-plane vibration (E12g) and out-of-plane vibration (A1g), indicates bilayer MoS2. AFM and SEM images result provided the information of film thickness and surface morphology. Photoluminescence spectra indicates the direct band gap transition at 1.85 eV. The synthesis route by sputtering and post sulfurization process open up the novel possibility of mass and batch production of MoS2. We believe that our synthesis film will help to observe basic properties and to apply them fundamental research for practical applications in the field of electronics and optoelectronics. |
| 저자 |
Sang-Woo Kang, Rauf Shahzad, TaeWan Kim
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| 소속 |
KRISS |
| 키워드 |
TMDs; 2D layer material; molybdenum disulfide; sputtering; Sulfurizing temperature and pressure.
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| E-Mail |
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