| 초록 |
Poly(styrene-r-3-methacryloxypropyltrimethoxysilane)(PSMPTS) was synthesized by a free radical polymerization for use as dielectric surface modifiers. PSMPTS was spun-cast onto a hydrophilic SiO2 and was then annealed at 150°C in ambient air. PSMPTS with a molecular weight of 32kDa and ~30 MPTS coupling sites, was easily grafted onto the SiO2 surface after annealing when treated for above 1min, yielding a physicochemically stable layer. On the untreated and polymer-treated dielectrics, spin-casting of an ultrasonicated poly(3-hexylthiophene)(P3HT) solution yielded highly interconnected crystal nanofibrils. The resulting field-effect transistors showed similar mobility values of ~0.012cm2/Vs for all surfaces. However, the threshold voltage (Vth) drastically decreased from 13 (untreated) to 0V by grafting the PSMPTS to the SiO2 surface. In particular, the interfacial charge traps that affect Vth were minimized by grafting the 11mol% MPTS-loaded copolymer to the polar dielectric surface. |
