| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | A High response photodetector with ALD SnS2 and Graphene hetero-structure |
| 초록 | Graphene and other two-dimensional materials, such as transition metal dichalcogenides, have rapidly established themselves as intriguing building blocks for optoelectronic applications. Especially, graphene is a promising candidate material for ultra-broadband photodetectors, as its absorption spectrum covers the entire ultraviolet to far-infrared range. However, the responsivity of graphene-based photodetectors has so far been limited due to the small optical absorption of a monolayer of carbon atoms. Here, we demonstrated a highly responsive photodetector based on ALD SnS2-graphene hetero-structure. SnS2 were deposited by atomic layer deposition and SnS2-graphene hybrid photodetectors were fabricated. The properties of photodetector were investigated by XRD, Raman, UPS and electrical characteristics were analyzed. |
| 저자 | 이승진1, 임형순2, 주현수1, 인재현1, 차익수1, 이교섭1, 전형탁1, 이전국2 |
| 소속 | 1한국과학기술(연), 2한양대 |
| 키워드 | graphene; SnS2; atomic layer deposition; photodetector |
