| 학회 |
한국재료학회 |
| 학술대회 |
2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 |
18권 2호 |
| 발표분야 |
B. 나노재료(Nanomaterials) |
| 제목 |
Facile Release of Si Nanowires By Wet Chemical Etching Process Based On Alkali Hydroxides |
| 초록 |
In this research, a simple process for releasing Si nanowires(SiNWs) and keeping their almost original length has been demonstrated. SiNWs used in this research was made by metal-assisted electroless etching process. KOH or NaOH was used for releasing the SiNWs with wet-etching process at bottom site of the SiNWs array. During the releasing process of SiNWs from the mother Si wafer substrate, the Si oxide layer existed around the SiNWs act as a etch mask from the anisotropic wet-etching process by alkali hydroxide. After releasing the SiNWs from the mother Si substrate, the mother Si wafer substrate can be recycled to fabricate SiNWs by MaCE process. The released SiNWs was tested for the field effect transistor(FET) on flexible PET substrate. If this method combined with other proper assembling thechnique, such like flexible electronics or composite with other materials, it could be very valuable for various fields. |
| 저자 |
Dahl-Young Khang, Sung-Soo Yoon
|
| 소속 |
연세대 |
| 키워드 |
Si nanowire; Metal assisted chemical etching; Flexible Field effect transistor; Alkali hydroxide etching
|
| E-Mail |
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